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Ab initio study of ZnCoO diluted magnetic semiconductor and its magnetic properties

Identifieur interne : 000343 ( Main/Exploration ); précédent : 000342; suivant : 000344

Ab initio study of ZnCoO diluted magnetic semiconductor and its magnetic properties

Auteurs : S. Lardjane [France, Algérie] ; G. Merad [Algérie] ; N. Fenineche [France] ; A. Billard [France] ; H. I. Faraoun [Algérie]

Source :

RBID : Pascal:13-0230165

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English descriptors

Abstract

Transition metal-doped wide band gap semiconductors, such as ZnO, attract much attention due to the theoretical prediction that ZnO is a room temperature ferromagnetic semiconductor [1,2]. Very controversial experimental and theoretical papers have been published to discuss the origin of ferromagnetic ordering and the relevance of the Curie temperature (Tc) of Co-doped ZnO [3-5]. In order to get better insight, electronic structure of CoxZn1-xO magnetic semiconductor was investigated via first principle calculations. The generalised gradient approximations (GGA) and the GGA with Hubbard U correction (GGA + U) in the framework of density functional theory (DFT) have been used. Calculations are done for different doping concentrations to discuss the contribution of different atoms in magnetic moments and magnetic coupling.


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Le document en format XML

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<term>Point Curie</term>
<term>Addition cobalt</term>
<term>Structure électronique</term>
<term>Méthode fonctionnelle densité</term>
<term>Approximation gradient généralisé</term>
<term>Modèle Hubbard</term>
<term>Concentration impureté</term>
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<term>Semiconducteur semimagnétique</term>
<term>Semiconducteur bande interdite large</term>
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<div type="abstract" xml:lang="en">Transition metal-doped wide band gap semiconductors, such as ZnO, attract much attention due to the theoretical prediction that ZnO is a room temperature ferromagnetic semiconductor [1,2]. Very controversial experimental and theoretical papers have been published to discuss the origin of ferromagnetic ordering and the relevance of the Curie temperature (T
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Zn
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O magnetic semiconductor was investigated via first principle calculations. The generalised gradient approximations (GGA) and the GGA with Hubbard U correction (GGA + U) in the framework of density functional theory (DFT) have been used. Calculations are done for different doping concentrations to discuss the contribution of different atoms in magnetic moments and magnetic coupling.</div>
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